Robin Rowe talks about coding, programming education, and China in the age of AI feature TrapC, a memory-safe version of the ...
The idea of a living organism replacing a silicon chip inevitably evokes science-fiction scenarios. However, a recent study ...
Scientists maximize the efficiency of hafnia-based ferroelectric memory devices. A research team led by Professor Jang-Sik Lee from the Department of Materials Science and Engineering and the ...
Researchers have demonstrated that the layered multiferroic material nickel iodide (NiI2) may be the best candidate yet for devices such as magnetic computer memory that are extremely fast and compact ...
Researchers have developed a new type of memory cell that can both store information and do high-speed, high-efficiency calculations. The memory cell enables users to run high-speed computations ...
The original version of this story appeared in Quanta Magazine. One July afternoon in 2024, Ryan Williams set out to prove himself wrong. Two months had passed since he’d hit upon a startling ...